ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted, V F = 1.1 V Max. @ I F = 10 mA for all types)
V RWM
(V)
I R ( m A)
@ V RWM
V BR (V)
@ I T
(Note 2)
I T
V C (V)
@ I PP =
5.0 A ?
V C (V) @
Max I PP ?
I PP
(A) ?
P pk
(W) ?
C
(pF)
V C
Per
Device*
ESD5Z2.5T1G
ESD5Z3.3T1G
ESD5Z5.0T1G
ESD5Z6.0T1G
ESD5Z7.0T1G
ESD5Z12T1G
Device
Marking
ZD
ZE
ZF
ZG
ZH
ZM
Max
2.5
3.3
5.0
6.0
7.0
12
Max
6.0
0.05
0.05
0.01
0.01
0.01
Min
4.0
5.0
6.2
6.8
7.5
14.1
mA
1.0
1.0
1.0
1.0
1.0
1.0
Typ
6.5
8.4
11.6
12.4
13.5
17
Max
10.9
14.1
18.6
20.5
22.7
25
Max
11.0
11.2
9.4
8.8
8.8
9.6
Max
120
158
174
181
200
240
Typ
145
105
80
70
65
55
IEC61000 ? 4 ? 2
(Note 3)
Figures 1 and 2
See Below
(Note 4)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
* Include SZ-prefix devices where applicable.
?Surge current waveform per Figure 5.
2. V BR is measured with a pulse test current I T at an ambient temperature of 25 ° C.
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
4. ESD5Z5.0T1G shown below. Other voltages available upon request.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV contact per IEC 61000 ? 4 ? 2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV contact per IEC 61000 ? 4 ? 2
http://onsemi.com
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